Транзистор: N-MOSFET; POWER MOS 5®; полевой; 400В; 23А; Idm: 92А Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 23A
- Drain-source voltage: 400V
- Gate charge: 120нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 200mΩ
- Polarisation: unipolar
- Power dissipation: 250W
- Pulsed drain current: 92A
- Technology: POWER MOS 5®
- Type of transistor: N-MOSFET