Транзистор: N-MOSFET; полевой; 600В; 28А; Idm: 160А; 780Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 28A
- Drain-source voltage: 600V
- Gate charge: 215нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 150mΩ
- Polarisation: unipolar
- Power dissipation: 780W
- Pulsed drain current: 160A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET