Транзистор: N-MOSFET; полевой; 800В; 29А; Idm: 173А; 1135Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 29A
- Drain-source voltage: 800V
- Gate charge: 305нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 210mΩ
- Polarisation: unipolar
- Power dissipation: 1135W
- Pulsed drain current: 173A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET