Транзистор: N-MOSFET; полевой; 1,2кВ; 3А; Idm: 15А; 225Вт; TO220-3 Технические параметры
- Case: TO220-3
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 1.2kV
- Gate charge: 43нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 4.2Ω
- Polarisation: unipolar
- Power dissipation: 225W
- Pulsed drain current: 15A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET