Транзистор: N-MOSFET; полевой; 500В; 46А; Idm: 184А; 520Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 46A
- Drain-source voltage: 500V
- Gate charge: 95нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 100mΩ
- Polarisation: unipolar
- Power dissipation: 520W
- Pulsed drain current: 184A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET