Транзистор: N-MOSFET; полевой; 500В; 22А; Idm: 88А; 265Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 22A
- Drain-source voltage: 500V
- Gate charge: 43нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 240mΩ
- Polarisation: unipolar
- Power dissipation: 265W
- Pulsed drain current: 88A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET