Транзистор: N-MOSFET; полевой; 600В; 21А; Idm: 84А; 300Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 21A
- Drain-source voltage: 600V
- Gate charge: 65нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 290mΩ
- Polarisation: unipolar
- Power dissipation: 300W
- Pulsed drain current: 84A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET