Технические параметры
- Technology: POWER MOS 8®
- Drain current: 47A
- Gate charge: 290nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±30V
- Drain-source voltage: 500V
- Pulsed drain current: 230A
- Mounting: THT
- Case: TO247MAX
- Type of transistor: N-MOSFET
- On-State Resistance: 75mΩ
- Power dissipation: 1.04kW