Транзистор: N-MOSFET; полевой; 1кВ; 5А; Idm: 27А; 290Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 5A
- Drain-source voltage: 1kV
- Gate charge: 58нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 2Ω
- Polarisation: unipolar
- Power dissipation: 290W
- Pulsed drain current: 27A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET