Транзистор: N-MOSFET; полевой; 1,2кВ; 5А; Idm: 28А; 335Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 5A
- Drain-source voltage: 1.2kV
- Gate charge: 80нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 2.4Ω
- Polarisation: unipolar
- Power dissipation: 335W
- Pulsed drain current: 28A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET