Технические параметры
- Technology: POWER MOS 7®
- Drain current: 52A
- Gate charge: 285nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±30V
- Drain-source voltage: 800V
- Pulsed drain current: 208A
- Mounting: THT
- Case: TO264MAX
- Type of transistor: N-MOSFET
- On-State Resistance: 140mΩ
- Power dissipation: 893W