Транзистор: N-MOSFET; полевой; 800В; 31А; Idm: 124А; 565Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 31A
- Drain-source voltage: 800V
- Gate charge: 160нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 260mΩ
- Polarisation: unipolar
- Power dissipation: 565W
- Pulsed drain current: 124A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET