Транзистор: N-MOSFET; полевой; 500В; 53А; Idm: 270А; 1135Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 53A
- Drain-source voltage: 500V
- Gate charge: 340нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 65mΩ
- Polarisation: unipolar
- Power dissipation: 1135W
- Pulsed drain current: 270A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET