Транзистор: NPN; биполярный; 65В; 0,1А; 500мВт; TO92 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 700mV
- Case: TO92
- Collector current: 0.1A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 600mV
- Collector-Base Voltage (Vcbo): 80V
- Collector-emitter voltage: 65V
- Collector-Emitter Voltage (Vceo): 65V
- Continuous Collector Current (Ic): 100mA
- Current gain: 110...800
- Emitter-Base Voltage (Vebo): 6V
- Frequency: 300MHz
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: TO-92
- Packaging: Fan Fold
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 500mW
- Power Dissipation (Pd): 625mW
- Series: 450
- Transit Frequency: 150MHz
- Type of transistor: NPN
