Транзистор: N-MOSFET; полевой; 200В; 100А; Idm: 400А; 694Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: 200V
- Gate charge: 140нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 16mΩ
- Polarisation: unipolar
- Power dissipation: 694W
- Pulsed drain current: 400A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET