Транзистор: N-MOSFET Технические параметры
- Case: TO247
- Drain current: 48.7A
- Drain-source voltage: 600V
- Gate charge: 285нКл
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- On-State Resistance: 36mΩ
- Power dissipation: 592W
- Pulsed drain current: 231A
- Type of transistor: N-MOSFET