Транзистор: NPN; биполярный; 25В; 800мА; 625мВт; TO92 Технические параметры
- Case: TO92
- Collector current: 800mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 700mV
- Collector-emitter voltage: 25V
- Collector-Emitter Voltage (Vceo): 25V
- Continuous Collector Current (Ic): 800mA
- Current gain: 250
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Housing: TO92
- Kind of package: бобина
- Manufacturer: Diotec Semiconductor
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Number of Mating Cycles: 400
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: TO-92
- Packaging: Ammo Pack
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 625mW
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transistor type: NPN
- Transit Frequency: 100MHz
- Коэффициент усиления по току: 250
- Мощность: 625mW
- Напряжение коллектор-эмиттер: 25V
