Транзистор: NPN; биполярный; 30В; 100мА; 500мВт; TO92 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 900mV
- Case: TO92
- Collector current: 100mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 200mV
- Collector-Base Voltage (Vcbo): 30V
- Collector-emitter voltage: 30V
- Collector-Emitter Voltage (Vceo): 30V
- Continuous Collector Current (Ic): 100mA
- Current gain: 120
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Housing: TO92
- Kind of package: бобина
- Manufacturer: Diotec Semiconductor
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: TO-92
- Packaging: Bulk
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 500mW
- Reflow Temperature Max.: 260°C
- Sheets: 420
- Transistor type: NPN
- Transit Frequency: 300MHz
- Коэффициент усиления по току: 120
- Мощность: 500mW
- Напряжение коллектор-эмиттер: 30V