Транзистор: PNP; биполярный; 45В; 100мА; 500мВт; TO92 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 900mV
- Case: TO92
- Collector current: 100mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 250mV
- Collector-Base Voltage (Vcbo): 50V
- Collector-emitter voltage: 45V
- Collector-Emitter Voltage (Vceo): 45V
- Continuous Collector Current (Ic): 100mA
- Current gain: 200
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Housing: TO92
- Kind of package: бобина
- Manufacturer: Diotec Semiconductor
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Number of Mating Cycles: 400
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: PNP
- Package Type: TO-92
- Packaging: Ammo Pack
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 500mW
- Reflow Temperature Max.: 260°C
- Transistor type: PNP
- Transit Frequency: 150MHz
- Коэффициент усиления по току: 200
- Мощность: 500mW
- Напряжение коллектор-эмиттер: 45V
