Транзистор: PNP; биполярный; 25В; 800мА; 310мВт; SOT23 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1.3V
- Case: SOT23
- Collector current: 800mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 700mV
- Collector-emitter voltage: 25V
- Collector-Emitter Voltage (Vceo): 25V
- Continuous Collector Current (Ic): 800mA
- Current gain: 250
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Housing: SOT23
- Kind of package: бобина
- Manufacturer: Diotec Semiconductor
- Mount: SMD
- Mounting: SMD
- Mounting Type: SMD
- Number of Mating Cycles: 400
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: PNP
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 310mW
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transistor type: PNP
- Transit Frequency: 100MHz
- Коэффициент усиления по току: 250
- Мощность: 310mW
- Напряжение коллектор-эмиттер: 25V