Транзистор: NPN; биполярный; 80В; 100мА; 200мВт; SOT323 Технические параметры
- Automotive Qualification Standard: AEC-Q101
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 900mV
- Case: SOT323
- Collector current: 100mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 600mV
- Collector-Base Voltage (Vcbo): 80V
- Collector-emitter voltage: 80V
- Collector-Emitter Voltage (Vceo): 45V
- Continuous Collector Current (Ic): 100mA
- Current gain: 290
- Emitter-Base Voltage (Vebo): 6V
- Height Units: 3
- Housing: SOT323
- Kind of package: бобина
- Manufacturer: Diotec Semiconductor
- Mount: SMD
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-323
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 200mW
- Reflow Temperature Max.: 260°C
- Sheets: 520
- Transistor type: NPN
- Transit Frequency: 100MHz
- Коэффициент усиления по току: 290
- Мощность: 200mW
- Напряжение коллектор-эмиттер: 80V
