Технические параметры
- Drain current: 4.5/-2.7A
- #Promotion: vishay_201906
- Gate charge: 4/11.6nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 100/-100V
- Mounting: SMD
- Case: SO8
- Type of transistor: N/P-MOSFET
- On-State Resistance: 57/183mΩ
- Power dissipation: 2.3/2.7W