Технические параметры
- Technology: NPT
- Collector current: 40A
- Collector-emitter voltage: 4kV
- Gate charge: 275nC
- Turn-on time: 260ns
- Turn-off time: 1.17µs
- Kind of package: tube
- Gate - emitter voltage: ±20V
- Pulsed collector current: 400A
- Features of semiconductor devices: high voltage
- Mounting: THT
- Case: ISOPLUS i5-pac™
- Type of transistor: IGBT
- Power dissipation: 380W