Технические параметры
- Power: 960mW
- Drain current: 5.5A
- Gate charge: 6nC
- Polarisation: unipolar
- Transistor type: N-MOSFET x2
- Gate-source voltage: ±12V
- Drain-source voltage: 20V
- Semiconductor structure: common drain
- Mounting: SMD
- Case: TSSOP8
- On-State Resistance: 21 MΩ