Транзистор: P-MOSFET; полевой; -250В; -430мА; 1,8Вт; PG-SOT223 Технические параметры
- Automotive Qualification Standard: AEC-Q101
- Case: PG-SOT223
- Continuous Drain Current (Id): 430mA
- Drain current: -430mA
- Drain-source voltage: -250V
- Drain-Source Voltage (Vds): 250V
- Fall Time: 67ns
- Gate-source voltage: ±20В
- Gate-Source Voltage: 20V
- Height Units: 4
- Housing: PG-SOT223
- Manufacturer: Infineon
- Mount: SMD
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 4Ω
- On-State Resistance: 4Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-223
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 1.8W
- Reflow Temperature Max.: 260°C
- Rise Time: 11.1ns
- Technology: SIPMOS™
- Transistor Polarity: P-Channel
- Transistor type: P-MOSFET
- Turn-OFF Delay Time: 254ns
- Turn-ON Delay Time: 5.7ns
- Мощность: 1.8W
- Сопротивление в открытом состоянии: 4000mΩ
- Ток стока: -0.43A
