Транзистор: P-MOSFET; полевой; -50В; -130мА; 360мВт; SOT23 Технические параметры
- Case: SOT23
- Continuous Drain Current (Id): -130mA
- Drain current: -130mA
- Drain-source voltage: -50V
- Drain-Source Voltage (Vds): -50V
- Fall Time: 9.6ns
- Gate charge: 1.3нC
- Gate-source voltage: ±20В
- Gate-Source Voltage: 20V
- Height Units: 3
- Housing: SOT23
- Kind of package: бобина
- Manufacturer: ON SEMICONDUCTOR
- Mount: SMD
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 10Ω
- On-State Resistance: 10Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 360mW
- Reflow Temperature Max.: 300°C
- Rise Time: 13ns
- Transistor Polarity: P-Channel
- Transistor type: P-MOSFET
- Turn-OFF Delay Time: 20ns
- Turn-ON Delay Time: 5ns
- Мощность: 0.36W
- Сопротивление в открытом состоянии: 17000mΩ
- Ток стока: -0.13A
