Транзистор: NPN; биполярный; 400В; 300мА; 625мВт; TO92 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 750mV
- Case: TO92
- Collector current: 300mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 750mV
- Collector-Base Voltage (Vcbo): 500V
- Collector-emitter voltage: 400V
- Collector-Emitter Voltage (Vceo): 400V
- Continuous Collector Current (Ic): 300mA
- Emitter-Base Voltage (Vebo): 6V
- Height Units: 3
- Housing: TO92
- Kind of package: Ammo Pack
- Manufacturer: Diotec Semiconductor
- Microstep Resolution: 200
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: TO-92
- Packaging: Ammo Pack
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 625mW
- Quantity in package: 4000шт
- Reflow Temperature Max.: 260°C
- Transistor type: NPN
- Transit Frequency: 50MHz
- Коэффициент усиления по току: 200
- Мощность: 625mW
- Напряжение коллектор-эмиттер: 400V
- Потери мощности: 625mW
