Технические параметры
- Technology: CoolMOS™ P7
- Drain current: 3.7A
- Gate charge: 15nC
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 950V
- Features of semiconductor devices: ESD protected gate
- Mounting: THT
- Case: TO220FP
- Type of transistor: N-MOSFET
- On-State Resistance: 1200mΩ
- Power dissipation: 27W