Транзистор: N-MOSFET; полевой; 950В; 8,6А; 30Вт; TO220FP Технические параметры
- Case: TO220FP
- Drain current: 8.6A
- Drain-source voltage: 950V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 35нКл
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 450mΩ
- Polarisation: unipolar
- Power dissipation: 30W
- Technology: CoolMOS™ P7
- Type of transistor: N-MOSFET
