Технические параметры
- Technology: CoolMOS™ P7
- Drain current: 8.6A
- Gate charge: 35nC
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 950V
- Features of semiconductor devices: ESD protected gate
- Mounting: THT
- Case: TO220FP
- Type of transistor: N-MOSFET
- On-State Resistance: 450mΩ
- Power dissipation: 30W