Технические параметры
- Drain current: 3A
- Reverse recovery time: 1.5µs
- Gate charge: 67nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 1.5kV
- Mounting: THT
- Case: ISOTO247™
- Type of transistor: N-MOSFET
- On-State Resistance: 3.85Ω
- Power dissipation: 125W