Технические параметры
- Frequency: 860MHz
- Efficiency: 70%
- Output power: 150W
- Drain current: 18A
- Gain: 18dB
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Transistor kind: RF
- Electrical mounting: THT
- Mechanical mounting: screw
- Drain-source voltage: 80V
- Case: M246
- Type of transistor: N-MOSFET
- Power dissipation: 200W