Транзистор: N-MOSFET; полевой; RF; 80В; 18А; 200Вт; M246; 18дБ; 70% Технические параметры
- Case: M246
- Channel kind: enhanced
- Drain current: 18A
- Drain-source voltage: 80V
- Efficiency: 70%
- Electrical mounting: THT
- Frequency: 860MHz
- Gain: 18dB
- Kind of package: bulk
- Manufacturer: STM
- Mechanical mounting: screw
- Output power: 150W
- Polarisation: unipolar
- Power dissipation: 200W
- Transistor kind: RF
- Type of transistor: N-MOSFET