Транзистор: N-MOSFET; полевой; 620В; 3А; 30Вт; TO220FP Технические параметры
- Manufacturer: STM
- Technology: MDmesh™
- Drain current: 3A
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 620V
- Features of semiconductor devices: ESD protected gate
- Mounting: THT
- Case: TO220FP
- Type of transistor: N-MOSFET
- On-State Resistance: 1200mΩ
- Power dissipation: 30W