Транзистор: N-MOSFET; полевой; 600В; 22А; 250Вт; TO220-3 Технические параметры
- Manufacturer: STM
- Technology: SuperMesh™
- Drain current: 22A
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±25V
- Drain-source voltage: 600V
- Features of semiconductor devices: ESD protected gate
- Mounting: THT
- Case: TO220-3
- Type of transistor: N-MOSFET
- On-State Resistance: 88mΩ
- Power dissipation: 250W