Технические параметры
- Technology: TRENCH POWER LV
- Drain current: -5.6A
- Gate charge: 8.6nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±10V
- Drain-source voltage: -20V
- Pulsed drain current: -28A
- Mounting: SMD
- Case: DFN2020-6
- Type of transistor: P-MOSFET
- On-State Resistance: 55mΩ
- Power dissipation: 2.5W