Технические параметры
- Case: PG-TO220-3
- Channel kind: enhanced
- Drain current: 7.1A
- Drain-source voltage: 800V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 450mΩ
- Polarisation: unipolar
- Power dissipation: 73W
- Pulsed drain current: 29A
- Technology: CoolMOS™ P7
- Type of transistor: N-MOSFET