Технические параметры
- Gate charge: 9.5nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±12V
- Drain-source voltage: 20V
- Semiconductor structure: common drain
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: DFN4
- Type of transistor: N-MOSFET x2
- On-State Resistance: 34mΩ
- Power dissipation: 1.3W