Транзистор: N/P-MOSFET; полевой; комплементарная пара; 30/-30В Технические параметры
- Case: TO252-4
- Channel kind: enhanced
- Drain current: 12/-9.4A
- Drain-source voltage: 30/-30V
- Gate charge: 9.6нКл
- Gate-source voltage: ±20V
- Manufacturer: AOS
- Mounting: SMD
- On-State Resistance: 16.5/22.5mΩ
- Polarisation: unipolar
- Power dissipation: 6.2/12.5W
- Semiconductor structure: common drain
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET