Технические параметры
- Drain current: -15.5A
- Gate charge: 20nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±8V
- Drain-source voltage: -12V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: DFN2x2C
- Type of transistor: P-MOSFET
- On-State Resistance: 8mΩ
- Power dissipation: 3.2W