Транзистор: N-MOSFET; полевой; 60В; 36,5А; 23,5Вт; TO251 Технические параметры
- Case: TO251
- Channel kind: enhanced
- Drain current: 36.5A
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 14.5нКл
- Gate-source voltage: ±20V
- Manufacturer: AOS
- Mounting: THT
- On-State Resistance: 9.5mΩ
- Polarisation: unipolar
- Power dissipation: 23.5W
- Type of transistor: N-MOSFET