Транзистор: N/P-MOSFET; полевой; комплементарная пара; 60/-50В Технические параметры
- Case: SOT363
- Channel kind: enhanced
- Drain current: 0.115/-0.13A
- Drain-source voltage: 60/-50V
- Features of semiconductor devices: automotive
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 10/13.5Ω
- Polarisation: unipolar
- Power dissipation: 0.2W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET