Технические параметры
- Drain current: 3.7/-2.3A
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Transistor kind: complementary
- Gate-source voltage: ±8V
- Drain-source voltage: 12/-12V
- Mounting: SMD
- Case: U-DFN2020-6
- Type of transistor: N/P-MOSFET
- On-State Resistance: 65/210mΩ
- Power dissipation: 1.4W