Транзистор: P-MOSFET; полевой; -12В; -0,2А; 0,36Вт; X2-DFN0806-3 Технические параметры
- Case: X2-DFN0806-3
- Channel kind: enhanced
- Drain current: -0.2A
- Drain-source voltage: -12V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 5Ω
- Polarisation: unipolar
- Power dissipation: 0.36W
- Type of transistor: P-MOSFET