Транзистор: P-MOSFET; полевой; -20В; -3,9А; 0,73Вт; U-DFN2020-6 Технические параметры
- Case: U-DFN2020-6
- Channel kind: enhanced
- Drain current: -3.9A
- Drain-source voltage: -20V
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 90mΩ
- Polarisation: unipolar
- Power dissipation: 0.73W
- Type of transistor: P-MOSFET