Транзистор: P-MOSFET; полевой; -25В; -5,4А; 0,8Вт; U-DFN2020-6 Технические параметры
- Case: U-DFN2020-6
- Channel kind: enhanced
- Drain current: -5.4A
- Drain-source voltage: -25V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 40mΩ
- Polarisation: unipolar
- Power dissipation: 0.8W
- Type of transistor: P-MOSFET