Транзистор: P-MOSFET x2; полевой; -20В; -4,1А; 0,9Вт; U-DFN2030-6 Технические параметры
- Case: U-DFN2030-6
- Channel kind: enhanced
- Drain current: -4.1A
- Drain-source voltage: -20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±10V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 75mΩ
- Polarisation: unipolar
- Power dissipation: 0.9W
- Type of transistor: P-MOSFET x2