Технические параметры
- Drain current: -0.25A
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8V
- Drain-source voltage: -20V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: X1-DFN1212-3
- Type of transistor: P-MOSFET
- On-State Resistance: 3Ω
- Power dissipation: 0.4W