Транзистор: P-MOSFET; полевой; -30В; -0,4А; 0,5Вт; X1-DFN1006-3 Технические параметры
- Case: X1-DFN1006-3
- Channel kind: enhanced
- Drain current: -0.4A
- Drain-source voltage: -30V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 2.4Ω
- Polarisation: unipolar
- Power dissipation: 0.5W
- Type of transistor: P-MOSFET