Транзистор: P-MOSFET; полевой; -40В; -5,4А; 0,81Вт; PowerDI®3333-8 Технические параметры
- Case: PowerDI®3333-8
- Channel kind: enhanced
- Drain current: -5.4A
- Drain-source voltage: -40V
- Features of semiconductor devices: automotive
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 45mΩ
- Polarisation: unipolar
- Power dissipation: 0.81W
- Type of transistor: P-MOSFET