Транзистор: N-MOSFET; 200В; 210А; 1500Вт; PLUS264™ Технические параметры
- Case: PLUS264™
- Channel kind: enhanced
- Drain current: 210A
- Drain-source voltage: 200V
- Gate charge: 255нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 0.0105Ω
- Power dissipation: 1500W
- Type of transistor: N-MOSFET