Транзистор: N-MOSFET; 650В; 80А; 890Вт; TO264P; 200нс Технические параметры
- Case: TO264P
- Channel kind: enhanced
- Drain current: 80A
- Drain-source voltage: 650V
- Features of semiconductor devices: ultra junction x-class
- Gate charge: 140нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 0.038Ω
- Power dissipation: 890W
- Reverse recovery time: 200ns
- Type of transistor: N-MOSFET